Title | Joint solution of the Schrödinger, Poisson and Boltzmann differential equations in a semiconductor heterostructure |
---|---|

Authors | A. S. Safoshkin^{1}, A. B. Dubois^{1}, K. V. Bukhensky^{1}, S. I. Kucheryavyy^{2}, G. S. Lukyanova^{1}, D. A. Zenkov^{1}, D. S. Kryuchkov^{1}^{1}Ryazan State Radioengineering University ^{2}Atomic Energy of National Research
Nuclear University of Moscow Engineer-Physics University |

Annotation | The article discusses the joint solution of the Schrödinger and Poisson equations for two-dimensional semiconductor heterojunction. The application of a triangular potential of well approximation for the calculation of the electron-electron interaction is offered in the paper. The influence of the parameters of the selected approximation was analyzed. |

Keywords | Electron-electron interaction, chaotic phase method, heterojunctions |

Citation | Safoshkin A. S., Dubois A. B., Bukhensky K. V., Kucheryavyy S. I., Lukyanova G. S., Zenkov D. A., Kryuchkov D. S. ''Joint solution of the Schrödinger, Poisson and Boltzmann differential equations in a semiconductor heterostructure'' [Electronic resource]. Proceedings of the XIII International scientific conference ''Differential equations and their applications in mathematical modeling''. (Saransk, July 12-16, 2017). Saransk: SVMO Publ, 2017. - pp. 198-204. Available at: http://conf.svmo.ru/files/deamm2017/papers/paper28.pdf. - Date of access: 11.12.2019. |

**© SVMO, National Research Mordovia State University, 2019**

Powered by Yii Framework